BAQ33...baq35 vishay semiconductors 1 (4) rev. 3, 13-feb-01 www.vishay.com document number 85537 small signal low leakage diodes features silicon planar diodes very low reverse current applications protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9371 order instruction type type differentiation ordering code remarks BAQ33 v rrm = 40 v BAQ33gs08 tape and reel baq34 v rrm = 70 v baq34gs08 tape and reel baq35 v rrm = 140 v baq35gs08 tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit BAQ33 v r 30 v reverse voltage baq34 v r 60 v g baq35 v r 125 v peak forward surge current t p =1 s i fsm 2 a forward current i f 200 ma junction temperature t j 200 c storage temperature range t stg 65...+200 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient on pc board 50 mmx50 mmx1.6 mm r thja 500 k/w
BAQ33...baq35 vishay semiconductors 2 (4) rev. 3, 13-feb-01 www.vishay.com document number 85537 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =100ma v f 1 v e 300lx, v r i r 1 3 na e 300lx, v r , t j =125 a c i r 0.5 a a reverse current e 300lx, v r =15 v BAQ33 i r 0.5 1 na e 300lx, v r =30 v baq34 i r 0.5 1 na e 300lx, v r =60 v baq35 i r 0.5 1 na BAQ33 40 v breakdown voltage i r =5 a a, t p /t=0.01, t p =0.3ms baq34 v ( br ) 70 v g r a baq35 (br) 140 v diode capacitance v r =0, f=1mhz c d 3 pf characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 1 10 100 1000 10000 i reverse current ( na ) r t j junction temperature ( ? ? ? ? ?? ?????????? ???? ? ? ?? figure 1. reverse current vs. junction temperature 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i forward current ( ma ) f v f forward voltage ( v ) 2.0 94 9078 scattering limit t j =25 ? figure 2. forward current vs. forward voltage
BAQ33...baq35 vishay semiconductors 3 (4) rev. 3, 13-feb-01 www.vishay.com document number 85537 dimensions in mm 96 12070
BAQ33...baq35 vishay semiconductors 4 (4) rev. 3, 13-feb-01 www.vishay.com document number 85537 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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